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| Ordering number : ENA0480 FSS173 SANYO Semiconductors DATA SHEET FSS173 Features * * P-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. 4V drive. Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW10s) Drain Current (PW10s) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID ID IDP PD Tch Tstg Duty cycle1% Duty cycle1% Mounted on a ceramic board (1200mm2!0.8mm), PW10s Conditions Ratings --45 20 --6 --7 --24 2.4 150 --55 to +150 Unit V V A A A W C C Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss Conditions ID=--1mA, VGS=0V VDS=-45V, VGS=0V VGS= 16V, VDS=0V VDS=-10V, ID=--1mA VDS=-10V, ID=-6A ID=--6A, VGS=-10V ID=--3A, VGS=-4V VDS=-20V, f=1MHz VDS=-20V, f=1MHz VDS=-20V, f=1MHz Ratings min --45 --1 10 --1.2 7.2 12 26 40 2580 265 210 35 56 --2.6 typ max Unit V A A V S m m pF pF pF Marking : S173 Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 73106PA MS TB-00002429 No. A0480-1/4 FSS173 Continued from preceding page. Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--24V, VGS=-10V, ID=--6A VDS=--24V, VGS=-10V, ID=--6A VDS=--24V, VGS=-10V, ID=--6A IS=--6A, VGS=0V Ratings min typ 30 48 210 95 46 7 8 --0.82 --1.5 max Unit ns ns ns ns nC nC nC V Package Dimensions unit : mm (typ) 7005-002 Switching Time Test Circuit VIN VDD= --24V 8 5 0.3 0V --10V VIN ID= --6A RL=4 4.4 D PW=10s D.C.1% 6.0 VOUT 1 4 0.43 1.5 1.8 MAX 0.2 5.0 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : SOP8 G FSS173 P.G 50 S 0.595 1.27 0.1 --6 ID -- VDS --3.5 V --3 .0V --8.0V --12 ID -- VGS VDS= --10V --5 --10 Drain Current, ID -- A --4 Drain Current, ID -- A --10.0V --4. 0 V --8 --3 --5. 0V --6 --6. 0 V --2 --4 --1 --2 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 IT11339 0 0 --0.4 --0.8 --1.2 --1.6 --2.0 --2.4 --2.8 --3.2 --3.6 --4.0 Drain-to-Source Voltage, VDS -- V Gate-to-Source Voltage, VGS -- V 25 C --25C VGS= --2.5V Ta=7 5C IT11340 No. A0480-2/4 FSS173 80 RDS(on) -- VGS Ta=25C Static Drain-to-Source On-State Resistance, RDS(on) -- m 80 70 60 50 40 30 20 10 0 --60 RDS(on) -- Ta Static Drain-to-Source On-State Resistance, RDS(on) -- m 70 60 ID= --6A 50 --3A 40 30 20 10 0 --2 -I D= 3 = -GS A, V 4V , VG --6A I D= --1 S= 0V --3 --4 --5 --6 --7 --8 --9 --10 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V 3 yfs -- ID IT11341 2 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 Ambient Temperature, Ta -- C IT11342 IS -- VSD VGS=0V Forward Transfer Admittance, yfs -- S 2 10 7 5 3 2 1.0 7 5 3 2 VDS= --10V 25 C -25 =C Tc 75 Source Current, IS -- A C 5C 0.1 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Drain Current, ID -- A 5 3 5 7 --10 IT11343 --0.01 7 5 3 2 --0.001 --0.2 --0.4 Tc= 7 --0.6 --25 C --0.8 25 C --1.0 --1.2 IT11344 SW Time -- ID td(off) VDD= --24V VGS= --10V 7 5 3 Ciss, Coss, Crss -- VDS f=1MHz Ciss Diode Forward Voltage, VSD -- V Switching Time, SW Time -- ns 2 Ciss, Coss, Crss -- pF 2 100 7 5 3 2 tf 1000 7 5 3 2 td(on) tr Coss Crss 0 --5 --10 --15 --20 --25 --30 --35 --40 --45 10 7 --0.1 100 2 3 5 7 --1.0 2 3 5 --10 IT11345 5 3 2 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 7 Drain Current, ID -- A --10 --9 VGS -- Qg Drain-to-Source Voltage, VDS -- V IT11346 ASO Gate-to-Source Voltage, VGS -- V VDS= --10V ID= --6A IDP= --24A 10s 1m ID= --6A --8 s Drain Current, ID -- A 10 10 DC --7 --6 --5 --4 --3 --2 --1 0 0 5 10 15 20 25 30 35 40 45 50 0m ms s 10 op er ati s Operation in this area is limited by RDS(on). on --0.01 --0.01 2 3 Ta=25C Single pulse Mounted on a ceramic board (1200mm2!0.8mm) 5 7--0.1 23 5 7--1.0 23 5 7 --10 23 57 Total Gate Charge, Qg -- nC IT11347 Drain-to-Source Voltage, VDS -- V IT11348 No. A0480-3/4 FSS173 3.0 PD -- Ta M ou Allowable Power Dissipation, PD -- W 2.5 2.4 2.0 nt ed on ac er am ic 1.5 bo ar d( 12 00 m 1.0 m2 ! 0.8 m m 0.5 ), PW 1 140 0 0 20 40 60 80 100 120 0s 160 Ambient Temperature, Ta -- C IT11349 Note on usage : Since the FSS173 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 2006. Specifications and information herein are subject to change without notice. PS No. A0480-4/4 |
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